Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(100) surfaces
Identifieur interne : 000425 ( Main/Repository ); précédent : 000424; suivant : 000426Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(100) surfaces
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Abstract
Changes induced in the surface chemical composition of native oxide covered InAs(100) by both thermal annealing and atomic hydrogen cleaning have been investigated by soft X-ray photoemission spectroscopy. Annealing up to 450°C shows a reduction in the intensity of the In and As oxides, however this anneal is not sufficient to produce an oxide and carbon free surface. Exposure to a beam of atomic hydrogen at 360°C results in the removal of both native oxides and surface carbon contamination resulting in a clean In rich surface. The chemical stability of the cleaned InAs surface to prolonged atomic hydrogen exposure times at temperatures up to 420°C has also been investigated and shown to have no effect on the surface stoichiometry. .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(100) surfaces</title><author><name>RAJESH KUMAR CHELLAPPAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Sciences, Dublin City University</s1><s2>Dublin</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Dublin</wicri:noRegion></affiliation></author><author><name>ZHESHEN LI</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ISA, Institute of Physics and Astronomy, Aarhus University</s1><s2>8000 Aarhus</s2><s3>DNK</s3><sZ>2 aut.</sZ></inist:fA14><country>Danemark</country><wicri:noRegion>8000 Aarhus</wicri:noRegion></affiliation></author><author><name sortKey="Hughes, Greg" uniqKey="Hughes G">Greg Hughes</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physical Sciences, Dublin City University</s1><s2>Dublin</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Dublin</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0214466</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0214466 INIST</idno><idno type="RBID">Pascal:13-0214466</idno><idno type="wicri:Area/Main/Corpus">000B90</idno><idno type="wicri:Area/Main/Repository">000425</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Core levels</term><term>Hydrogen</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>Photoemission</term><term>Semiconductor materials</term><term>Surface cleaning</term><term>Synchrotron radiation</term><term>Thermal annealing</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Rayonnement synchrotron</term><term>Photoémission</term><term>Recuit thermique</term><term>Hydrogène</term><term>Niveau coeur</term><term>Nettoyage surface</term><term>Arséniure d'indium</term><term>Semiconducteur</term><term>H</term><term>As In</term><term>InAs</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Hydrogène</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Changes induced in the surface chemical composition of native oxide covered InAs(100) by both thermal annealing and atomic hydrogen cleaning have been investigated by soft X-ray photoemission spectroscopy. Annealing up to 450°C shows a reduction in the intensity of the In and As oxides, however this anneal is not sufficient to produce an oxide and carbon free surface. Exposure to a beam of atomic hydrogen at 360°C results in the removal of both native oxides and surface carbon contamination resulting in a clean In rich surface. The chemical stability of the cleaned InAs surface to prolonged atomic hydrogen exposure times at temperatures up to 420°C has also been investigated and shown to have no effect on the surface stoichiometry. .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>276</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(100) surfaces</s1></fA08><fA11 i1="01" i2="1"><s1>RAJESH KUMAR CHELLAPPAN</s1></fA11><fA11 i1="02" i2="1"><s1>ZHESHEN LI</s1></fA11><fA11 i1="03" i2="1"><s1>HUGHES (Greg)</s1></fA11><fA14 i1="01"><s1>School of Physical Sciences, Dublin City University</s1><s2>Dublin</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>ISA, Institute of Physics and Astronomy, Aarhus University</s1><s2>8000 Aarhus</s2><s3>DNK</s3><sZ>2 aut.</sZ></fA14><fA20><s1>609-612</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000503803940870</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0214466</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Changes induced in the surface chemical composition of native oxide covered InAs(100) by both thermal annealing and atomic hydrogen cleaning have been investigated by soft X-ray photoemission spectroscopy. Annealing up to 450°C shows a reduction in the intensity of the In and As oxides, however this anneal is not sufficient to produce an oxide and carbon free surface. Exposure to a beam of atomic hydrogen at 360°C results in the removal of both native oxides and surface carbon contamination resulting in a clean In rich surface. The chemical stability of the cleaned InAs surface to prolonged atomic hydrogen exposure times at temperatures up to 420°C has also been investigated and shown to have no effect on the surface stoichiometry. .</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Rayonnement synchrotron</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Synchrotron radiation</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photoémission</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photoemission</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Hydrogène</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Hydrogen</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Niveau coeur</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Core levels</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nettoyage surface</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Surface cleaning</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>H</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>34</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fN21><s1>196</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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